Journal of Materials Science and Chemical Engineering

Journal of Materials Science and Chemical Engineering

ISSN Print: 2327-6045
ISSN Online: 2327-6053
www.scirp.org/journal/msce
E-mail: msce@scirp.org
"Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy"
written by Dmitry Filatov, Dmitry Antonov, Ivan Antonov, Alexander Kasatkin, Oleg Gorshkov,
published by Journal of Materials Science and Chemical Engineering, Vol.5 No.1, 2017
has been cited by the following article(s):
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[8] High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3
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[9] Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor
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[10] Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy
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[11] Наблюдение квантоворазмерных эффектов при исследовании резистивного переключения в диэлектрических пленках с наночастицами Au методом …
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[12] Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles
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[13] Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria‐Stabilized Zirconia Films with Au Nanoparticles
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