World Journal of Condensed Matter Physics

World Journal of Condensed Matter Physics

ISSN Print: 2160-6919
ISSN Online: 2160-6927
www.scirp.org/journal/wjcmp
E-mail: wjcmp@scirp.org
"IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition"
written by Shin-ichi Kobayashi,
published by World Journal of Condensed Matter Physics, Vol.6 No.4, 2016
has been cited by the following article(s):
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[11] Charge trap analysis of nanolayer Si3N4 and SiO2 by electron irradiation assisted photoelectron emission
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[12] A Novel Approach for Dental Implant Technology
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[13] On the impact of strained PECVD nitride layers on oxide precipitate nucleation in silicon
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[14] Enhancement for Potential-Induced Degradation Resistance of Crystalline Silicon Solar Cells via Anti-Reflection Coating by Industrial PECVD Methods
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[15] Effect of Laser Beam Dimension on Laser-Assisted Chemical Vapor Deposition of Silicon Nitride Thin Films
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