Engineering

Engineering

ISSN Print: 1947-3931
ISSN Online: 1947-394X
www.scirp.org/journal/eng
E-mail: eng@scirp.org
"A New Model for the Etching Characteristics of Corners Formed by Si{111} Planes on Si{110} Wafer Surface"
written by Prem Pal, Sajal Sagar Singh,
published by Engineering, Vol.5 No.11A, 2013
has been cited by the following article(s):
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[15] Microstructures with Protected Convex Corners in Modified KOH Solution Exhibiting High-Speed Silicon Etching
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[16] Silicon wet bulk micromachining for MEMS
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[19] Effect of NH2OH on Etching Characteristics of Si {100} in KOH Solution
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[20] Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications
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[21] A measurement free pre-etched pattern to identify the< 110> directions on Si {110} wafer
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[22] Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMS
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[25] A detailed investigation and explanation of the appearance of different undercut profiles in KOH and TMAH
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[26] Anisotropic etching on Si {1 1 0}: experiment and simulation for the formation of microstructures with convex corners
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