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Spacer engineering on multi-channel FinFET for advanced wireless applications
AEU - International Journal of Electronics and Communications,
2024
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[2]
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Spacer engineering on multi-channel FinFET for advanced wireless applications
AEU - International Journal of Electronics and Communications,
2024
DOI:10.1016/j.aeue.2024.155298
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[3]
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Performance analysis of stacked Nano sheet at gate length of 10nm at linear and saturation region
2023 International Conference on Computer Communication and Informatics (ICCCI),
2023
DOI:10.1109/ICCCI56745.2023.10128358
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[4]
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Advanced Ultra Low‐Power Semiconductor Devices
2023
DOI:10.1002/9781394167647.ch1
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Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor
International Journal of RF and Microwave Computer-Aided Engineering,
2022
DOI:10.1002/mmce.22987
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[6]
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Design insights into
RF
/analog and linearity/distortion of spacer engineered multi‐fin
SOI FET
for terahertz applications
International Journal of RF and Microwave Computer-Aided Engineering,
2021
DOI:10.1002/mmce.22875
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[7]
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RF/Analog performance of GaAs Multi-Fin FinFET with stress effect
Microelectronics Journal,
2021
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[8]
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An Improved Analytical Model of Outer Fringe Capacitance of Multifin Diamond Shaped Raised Source/Drain FinFET
Silicon,
2021
DOI:10.1007/s12633-020-00683-z
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[9]
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Design Optimization Techniques in Nanosheet Transistor for RF Applications
IEEE Transactions on Electron Devices,
2020
DOI:10.1109/TED.2020.3019022
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[10]
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Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate
Silicon,
2020
DOI:10.1007/s12633-020-00408-2
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[11]
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Optimal Inter-Gate Separation and Overlapped Source of Multi-Channel Line Tunnel FETs
IEEE Open Journal of Nanotechnology,
2020
DOI:10.1109/OJNANO.2020.2998939
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[12]
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High performance dual-gate SiGe MOSFET for radio-frequency applications
AEU - International Journal of Electronics and Communications,
2019
DOI:10.1016/j.aeue.2019.152838
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[13]
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RF performance enhancement in multi-fin TFETs by scaling inter fin separation
Materials Science in Semiconductor Processing,
2017
DOI:10.1016/j.mssp.2017.08.014
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[14]
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Analysis of multifin n-FinFET for analog performance at 30nm gate length
2016 International Conference on Communication and Electronics Systems (ICCES),
2016
DOI:10.1109/CESYS.2016.7889956
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[15]
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A nanoscale dual-channel trench (DCT) MOSFET for analog/RF applications
Superlattices and Microstructures,
2015
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