Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

"Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs"
written by Yashu Swami, Sanjeev Rai,
published by Circuits and Systems, Vol.12 No.4, 2021

has been cited by the following article(s):

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[2]	Design Guidelines for Low Power Embedded Systems using Low Power Electronics
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[3]	Doped Graphene on Silicon Bottom Gated FET for High Drain Current and Applications in RF And Logic Circuits
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[1]	Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2025 DOI:10.1016/j.prime.2025.100934

[2]	Design Guidelines for Low Power Embedded Systems using Low Power Electronics WSEAS TRANSACTIONS ON ELECTRONICS, 2023 DOI:10.37394/232017.2023.14.8

[3]	Doped Graphene on Silicon Bottom Gated FET for High Drain Current and Applications in RF And Logic Circuits 2022 13th International Conference on Information and Communication Technology Convergence (ICTC), 2022 DOI:10.1109/ICTC55196.2022.9952777

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