has been cited by the following article(s):
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[1]
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Photovoltaic and Barrier Properties of Au/n-Ge Schottky Junction Modified by Methylene Blue Organic Dye Interlayer
Journal of Inorganic and Organometallic Polymers and Materials,
2025
DOI:10.1007/s10904-024-03352-5
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[2]
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Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities
Journal of Electronic Materials,
2024
DOI:10.1007/s11664-024-11213-7
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[3]
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The Electrical Characteristics of the Co/Giemsa/n-Si Heterostructure Depending on Measurement Temperatures and Frequencies
IEEE Sensors Journal,
2023
DOI:10.1109/JSEN.2023.3255180
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[4]
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The Electrical Characteristics of the Co/Giemsa/n-Si Heterostructure Depending on Measurement Temperatures and Frequencies
IEEE Sensors Journal,
2023
DOI:10.1109/JSEN.2023.3255180
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[5]
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Modification of barrier diode with cationic dye for high power applications
Optik,
2021
DOI:10.1016/j.ijleo.2021.166598
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[6]
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Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure
Journal of Alloys and Compounds,
2021
DOI:10.1016/j.jallcom.2021.158856
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[7]
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Modification of barrier diode with cationic dye for high power applications
Optik,
2021
DOI:10.1016/j.ijleo.2021.166598
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[8]
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Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure
Journal of Alloys and Compounds,
2021
DOI:10.1016/j.jallcom.2021.158856
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[9]
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An assessment on electrical characterization of Ni/n-Si Schottky rectifiers with and without Ta2O5 interfacial oxide layer
Surface Review and Letters,
2018
DOI:10.1142/S0218625X19500732
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