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The Journal of Physical Chemistry C,
2024
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Recent progress of group III–V materials-based nanostructures for photodetection
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2023
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High performance InAs0.91Sb0.09 MWIR detectors with an AlAs1-ySby graded barrier
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2023
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High-power, multi-junction, 905 nm vertical-cavity surface-emitting laser with an AlGaAsSb electron-blocking layer
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Structural and thermal properties of InSb:Mn with MnSb clusters
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2022
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Phonon frequencies, mechanical and optoelectronic properties for $${\mathbf{InP}}_{{\mathbf{x}}} {\mathbf{As}}_{{\mathbf{y}}} {\mathbf{Sb}}_{{1 - {\mathbf{x}} - {\mathbf{y}}}}$$/InAs alloys under the influence of pressure
Applied Physics A,
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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
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2021
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Phonon frequencies, mechanical and optoelectronic properties for $${\mathbf{InP}}_{{\mathbf{x}}} {\mathbf{As}}_{{\mathbf{y}}} {\mathbf{Sb}}_{{1 - {\mathbf{x}} - {\mathbf{y}}}}$$/InAs alloys under the influence of pressure
Applied Physics A,
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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
Materials Science and Engineering: B,
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2020
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Raman peak shifts by applied magnetic field in InSb/Al
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Materials Research Express,
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Structural and elastic behavior of aluminum pnictides with temperature effect
International Journal of Modern Physics B,
2019
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Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators
Optics Express,
2018
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Thermoelectric Properties of Nanostructured Material Based on Si and GaSb
Defect and Diffusion Forum,
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Study of effect of temperature on phase transition pressure of GaAs and GaSb
IOP Conference Series: Materials Science and Engineering,
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Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
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Simulations of realistic multifunctional nanoantenna enabled detectors
2017 International Applied Computational Electromagnetics Society Symposium - Italy (ACES),
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Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys
REM - International Engineering Journal,
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Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
Semiconductors,
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Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors
Optics Express,
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
Applied Physics Letters,
2016
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Study of In distribution on GaInSb:Al crystals by ion beam techniques
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
2016
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Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope
Carbon,
2016
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Study of In distribution on GaInSb:Al crystals by ion beam techniques
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
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Applied Physics Letters,
2016
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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
Applied Physics Letters,
2015
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Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology,
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PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application
Cryogenics,
2015
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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
Applied Physics Letters,
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First principle study of the physical properties of semiconducting binary antimonide compounds under hydrostatic pressures
Materials Science in Semiconductor Processing,
2014
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Ab-initio study of the structural, electronic and optical properties of BSb (110) and (100) surfaces
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Extra-low power consumption amplifier based on HEMT in unsaturated mode for use at subkelvin ambient temperatures
Cryogenics,
2014
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
AIP Advances,
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Effects of physical parameters on subthreshold characteristics of nitride and antimonide-based double material gate (DMG) HEMTs
8th International Conference on Electrical and Computer Engineering,
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Comparative study of subthreshold characteristics of different antimonide-based and nitride-based dual material gate (DMG) HEMTs
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014),
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DOI:10.1109/SMELEC.2014.6920818
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AIP Advances,
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Design of extra-low power consumption readout amplifiers for terahertz matrix receivers, bolometer arrays and qubits below 1 K
2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves,
2013
DOI:10.1109/MSMW.2013.6622181
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Raman spectroscopy of self-catalyzed GaAs1−xSbxnanowires grown on silicon
Nanotechnology,
2013
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Superposition of states in flux qubits with a Josephson junction of the ScS type (Review Article)
Low Temperature Physics,
2012
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Superposition of states in flux qubits with a Josephson junction of the ScS type (Review Article)
Low Temperature Physics,
2012
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