Journal of Sensor Technology

Journal of Sensor Technology

ISSN Print: 2161-122X
ISSN Online: 2161-1238
www.scirp.org/journal/jst
E-mail: jst@scirp.org
"Modelling of Thermal Behavior N-Doped Silicon Resistor"
written by Fouad Kerrour, Ali Boukabache, Patrick Pons,
published by Journal of Sensor Technology, Vol.2 No.3, 2012
has been cited by the following article(s):
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[5] Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor
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[11] Use of self-calibration data for multifunctional MEMS sensor prognostics
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[12] The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor
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[14] Raman spectroscopy characterization of a thermal bimorph actuator used in a bio-MEMS device
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