has been cited by the following article(s):
[1]
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Control of current polarity in concentric metal–insulator-semiconductor tunnel diode (MISTD) structures by designed coupling rings
Applied Physics A,
2025
DOI:10.1007/s00339-024-08139-6
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[2]
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Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack
Applied Physics A,
2024
DOI:10.1007/s00339-023-07192-x
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[3]
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Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‑volatile capacitive memory application
Journal of Materials Science: Materials in Electronics,
2024
DOI:10.1007/s10854-024-12780-5
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[4]
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New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device
Materials,
2022
DOI:10.3390/ma15103640
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