Electrical Properties of Compositional Al2O3 Supplemented HfO2 Thin Films by Atomic Layer Deposition

ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.org/journal/msa
E-mail: msa@scirp.org

Citations

"Electrical Properties of Compositional Al₂O₃ Supplemented HfO₂ Thin Films by Atomic Layer Deposition"
written by Yuxi Wang, Yong Zhang, Tingqu Wu, Weizheng Fang, Xufeng Kou, Tao Wu, Jangyong Kim,
published by Materials Sciences and Applications, Vol.13 No.9, 2022

has been cited by the following article(s):

[1]	High-Performance HfO/AlO Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform
	… on Electron Devices, 2024

[2]	High-k Challenges for a New Horizon in Functional Smart Electronics
	2021

Top

[1]	Experimental and theoretical investigations into structural, morphological and optical characters of the Al2O3, CuO and ZnO-based nanofluids for interfacial tension reduction Digest Journal of Nanomaterials and Biostructures, 2025 DOI:10.15251/DJNB.2025.201.213