AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

Journals Menu

Follow SCIRP

	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org

Google-based Impact Factor: 0.78
Citations h5-index & Ranking

Journals Menu

"AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature"
written by Youssou Traore, Ndeye Thiam, Moustapha Thiame, Amary Thiam, Mamadou Lamine Ba, Marcel Sitor Diouf, Ibrahima Diatta, Oulymata Mballo, El Hadji Sow, Mamadou Wade, Grégoire Sissoko,
published by Journal of Modern Physics, Vol.10 No.10, 2019

has been cited by the following article(s):

Google Scholar
CrossRef

[1]	AC Back Surface Recombination Velocity in n+-p-p+ Silicon Solar Cell under Monochromatic Light and Temperature
	2021

[2]	AC Recombination Velocity as Applied to Determine n+/p/p+ Silicon Solar Cell Base Optimum Thickness
	2020

[3]	One-Dimensional Study of Thermal Behavior of Typha Panel: Spectroscopy Characterization of Heat Exchange Coefficient on Front Face
	2020

[4]	Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination
	2020

[5]	Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell
	2020

[6]	Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination
	2019

[7]	Journal Homepage:-www. journalijar. com

Follow SCIRP

	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Journal of Modern Physics

Journal of Modern Physics

Journals Menu

Home

About SCIRP

Service

Policies