American Journal of Analytical Chemistry

American Journal of Analytical Chemistry

ISSN Print: 2156-8251
ISSN Online: 2156-8278
www.scirp.org/journal/ajac
E-mail: ajac@scirp.org
"Structural and Electrical Characterization of GaN Thin Films on Si(100)"
written by Gajanan Niranjan Chaudhari, Vijay Ramkrishna Chinchamalatpure, Sharada Arvind Ghosh,
published by American Journal of Analytical Chemistry, Vol.2 No.8, 2011
has been cited by the following article(s):
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[1] Response of structural and optical properties against proton irradiation in AlN: Tm thin films
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[2] A novel preparation of GaN-ZnO/g-C3N4 photocatalyst for methylene blue degradation
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[3] Artan Sıcaklığın Cam/GaN/InGaN Filmin Bazı Fiziksel Özelliklerine Etkisi
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[4] TVA ile üretilen Cam/GaN/InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri
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[5] Fabrication and characterization of gallium nitride thin film deposited on a sapphire substrate for photoelectrochemical water splitting applications
2020
[6] Improving polycrystalline GaN by controlling annealing temperature of ScN interlayer
2019
[7] Structural and optical changes of undoped GaN layers grown via radio-frequency magnetron sputtering obtained from GaN powders
2019
[8] P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution
Journal of Alloys and Compounds, 2019
[9] Zinc doping of Ga-rich GaN powders obtained by nitridation of the Ga-Zn liquid metallic solution
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[10] CERCETĂRI XRD ȘI XPS ALE STRATURILOR DE AlN, AlGaN, GaN DEPUSE PE SILICIU PRIN METODA HVPE
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[11] Processing and characterization of a free-standing bulk polycrystalline GaN layer
Journal of Alloys and Compounds, 2018
[12] Influence of ammonia flow rate for improving properties of polycrystalline GaN
Superlattices and Microstructures, 2018
[13] Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method
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[14] Deposition of a polycrystalline GaN layer on a porous Si/Si substrate by an electron beam evaporator with a successive ammonia annealing treatment
Journal of Alloys and Compounds, 2017
[15] Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
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[16] Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients
Superlattices and Microstructures, 2016
[17] X-Ray Photoelectronic Spectroscopy of GaN, AlGaN Layers, Grown on Silicon by the Chemical Transport Reactions Method
3rd International Conference on Nanotechnologies and Biomedical Engineering, 2016
[18] Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching
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[19] Surface Characterization Driven CMP Optimization for Gallium Nitride
2016
[20] CREATININE ADSORPTION BY ACTIVATED CARBON FIBRE (ACF) DERIVED FROM EMPTY FRUIT BUNCH (EFB) FIBRE
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[21] Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature
Nanoscale Research Letters, 2015
[22] Role of pre-annealing treatment in improving the porosity of gallium nitride on cubic silicon (100) substrate
Materials Science in Semiconductor Processing, 2015
[23] Synthesis and Characterization of Gallium nitride (GaN) thin films deposited by Low pressure chemical vapor deposition (LPCVD) technique.
Manipal Research Colloquium, 2015
[24] Optoelectronic properties of Indium-assisted Gallium Nitride Nanowires
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[25] Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si (100) substrates
Applied Physics Express, 2014
[26] Si–Sn Codoped N-Gan Film Grown on an Amorphous Glass Substrate with Dc-Pulse Sputtering
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