Journal of Modern Physics

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org
"Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State"
written by Ousmane Diasse, Amadou Diao, Mamadou Wade, Marcel Sitor Diouf, Ibrahima Diatta, Richard Mane, Youssou Traore, Gregoire Sissoko,
published by Journal of Modern Physics, Vol.9 No.2, 2018
has been cited by the following article(s):
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[3] AC Back Surface Recombination Velocity in n+-p-p+ Silicon Solar Cell under Monochromatic Light and Temperature
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[6] Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination
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[7] Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination
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[8] Concept de la vitesse de recombinaison surfacique appliqué à la détermination de l'épaisseur optimum de la base de la photopile au silicium avec effet du taux de …
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[9] Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect
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[10] Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles
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[11] Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination
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[12] Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and Base Thickness
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[13] Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged …
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[14] Ac Recombination Velocity in a Lamella Silicon Solar Cell
2018
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