Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface

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ISSN Print: 2327-6045
ISSN Online: 2327-6053
www.scirp.org/journal/msce
E-mail: msce@scirp.org

"Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface"
written by Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa,
published by Journal of Materials Science and Chemical Engineering, Vol.6 No.1, 2018

has been cited by the following article(s):

[1]	Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si
	2020

[2]	Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si (110) by solid-source molecular beam epitaxy
	2020

[3]	HREM Observation and Identification of the Causality of Twins in SiGe/Si (110)
	2020

[4]	109–HREM Observation and Identification of the Causality of Twins in SiGe/Si
	2020

[5]	Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré
	2018

[6]	Stability of strain in Si layers formed on SiGe/Si (110) heterostructures
	2018

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