Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

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ISSN Print: 2153-1196
ISSN Online: 2153-120X
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"Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects"
written by Amadou Diao, Mamadou Wade, Moustapha Thiame, Grégoire Sissoko,
published by Journal of Modern Physics, Vol.8 No.14, 2017

has been cited by the following article(s):

[1]	Etude à trois dimensions d'une photopile au silicium polycristallin: Effet du taux de dopage, de la taille des grains et des vitesses de recombinaison aux joints de grain.
	2022

[2]	Influence of Dust Deposition on the Electrical Parameters of Silicon-Based Solar Panels Installed in Senegal (Dakar Region)()
	2021

[3]	A Junction Electric Field Determination of a Bifacial Silicon Solar Cell under a Constant Magnetic Field Effect by Using the Photoconductivity Method
	2021

[4]	AC Back Surface Recombination Velocity in n+-p-p+ Silicon Solar Cell under Monochromatic Light and Temperature
	2021

[5]	n+-pp+ Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field
	2020

[6]	Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination
	2020

[7]	Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell
	2020

[8]	Technique de détermination de l'épaisseur optimum de la base appliquée à une photopile n+/p/p+ au silicium sous éclairement monochromatique de courtes …
	2020

[9]	Concept de la vitesse de recombinaison surfacique appliqué à la détermination de l'épaisseur optimum de la base de la photopile au silicium avec effet du taux de …
	2019

[10]	Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect
	2019

[11]	Ac Recombination Velocity in a Lamella Silicon Solar Cell
	2018

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