has been cited by the following article(s):
[1]
|
Impact of multiple cations doping on Zn–Sn–Se nanostructures for optoelectronic applications
|
|
Journal of Materials Science: Materials …,
2023 |
|
|
[2]
|
Stability of InP/ZnSe/ZnS Quantum Dots in Light-Emitting Diodes: Role of Shell Thickness and Surface Chemistry
|
|
2022 IEEE 12th …,
2022 |
|
|
[3]
|
Фотолюминесценция нанокристаллов ZnSxSe1-x и ZnSxSe1-x: Mn, полученных методом самораспространяющегося высокотемпературного синтеза
|
|
Proceedings of the …,
2022 |
|
|
[4]
|
Characterization of Cobalt Selenide Films using FESEM and EDX
|
|
Int. J. Thin Films Sci. Technol,
2022 |
|
|
[5]
|
Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides
|
|
2021 |
|
|
[6]
|
Structural, optical and electrical properties of spray-deposited Fe-doped nanocrystalline ZnS0.2Se0.8 thin films
|
|
2021 |
|
|
[7]
|
Investigation of Toxicity of Zinc Selenium/Zinc Sulphide Quantum (ZnSe/ZnS) Dots at Molecular Level
|
|
2020 |
|
|
[8]
|
Electronic, magnetic and optical properties of monolayer (ML) hexagonal ZnSe on vacancy defects at Zn sites from DFT-1/2 approach
|
|
2020 |
|
|
[9]
|
In vitro and In vivo toxicity analysis of zinc selenium/zinc sulfide (ZnSe/ZnS) quantum dots
|
|
2020 |
|
|
[10]
|
Metal–organic precursors for ternary and quaternary metal chalcogenide nanoparticles and thin films
|
|
2020 |
|
|
[11]
|
Development of Coinage Metal Chalcogenides Thin Films by Chemical Vapour Deposition Approach
|
|
2019 |
|
|
[12]
|
Progress in selenium based metal-organic precursors for main group and transition metal selenide thin films and nanomaterials
|
|
2019 |
|
|
[13]
|
Chalcogen-containing metal chelates as single-source precursors of nanostructured materials: recent advances and future development
|
|
2019 |
|
|
[14]
|
Photoelectrochemical performance of spray-deposited Fe-doped ZnS0. 2Se0. 8 thin films
|
|
2019 |
|
|
[15]
|
Исследование ширины запрещенной зоны смешанных кристаллов ZnSxSe₁₋ x
|
|
2018 |
|
|
[16]
|
Band gap change of bulk ZnSxSe1–x semiconductors by controlling the sulfur content
|
|
2018 |
|
|
[17]
|
Morphological, structural, compositional and raman characterization of ZnSxSe1-x thin films deposited by quasi-closed volume technique
|
|
2018 |
|
|
[18]
|
ИССЛЕÄОВАНИЕ ШИРИНЫ ЗАПРЕЩЕННОЙ ЗОНЫ СМЕШАННЫХ ÊРИСТАЛЛОВ ZnS
|
|
МАТЕРИАЛЫ ЭЛЕКТРОНИКИ,
2018 |
|
|
[19]
|
MORPHOLOGICAL, STRUCTURAL, COMPOSITIONAL AND RAMAN CHARACTERIZATION OF ZnSXSe1-X THIN FILMS DEPOSITED BY QUASI-CLOSED …
|
|
2018 |
|
|
[20]
|
Зміна забороненої зони ZnSxSe1–x об'ємних напівпровідників шляхом регулювання вмісту сірки
|
|
2018 |
|
|
[21]
|
Band gap change of bulk ZnSxSe1-x semiconductors by controlling the sulfur content
|
|
Ukrainian Journal of Physics,
2018 |
|
|
[22]
|
SEMICONDUCTORS AND DIELECTRICS
|
|
|
|
|
[1]
|
Impact of multiple cations doping on Zn–Sn–Se nanostructures for optoelectronic applications
Journal of Materials Science: Materials in Electronics,
2023
DOI:10.1007/s10854-022-09716-2
|
|
|
[2]
|
Stability of InP/ZnSe/ZnS Quantum Dots in Light-Emitting Diodes: Role of Shell Thickness and Surface Chemistry
2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP),
2022
DOI:10.1109/NAP55339.2022.9934113
|
|
|
[3]
|
Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides
Chemical Reviews,
2021
DOI:10.1021/acs.chemrev.0c01183
|
|
|
[4]
|
Investigation of band gap width in mixed ZnSxSe1–x crystals
Технология и конструирование в электронной аппаратуре,
2018
DOI:10.15222/TKEA2018.5-6.44
|
|
|