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Materials Sciences and Applications

Materials Sciences and Applications

Materials Sciences and Applications

ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.org/journal/msa
E-mail: msa@scirp.org
"Composition and Band Gap Controlled AACVD of ZnSe and ZnSxSe1-x Thin Films Using Novel Single Source Precursors"
written by Yousef Alghamdi,
published by Materials Sciences and Applications, Vol.8 No.10, 2017
has been cited by the following article(s):
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  • CrossRef
[1] Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides
2021
[2] Structural, optical and electrical properties of spray-deposited Fe-doped nanocrystalline ZnS0.2Se0.8 thin films
2021
[3] Electronic, magnetic and optical properties of monolayer (ML) hexagonal ZnSe on vacancy defects at Zn sites from DFT-1/2 approach
2020
[4] In vitro and In vivo toxicity analysis of zinc selenium/zinc sulfide (ZnSe/ZnS) quantum dots
2020
[5] Metal–organic precursors for ternary and quaternary metal chalcogenide nanoparticles and thin films
2020
[6] Development of Coinage Metal Chalcogenides Thin Films by Chemical Vapour Deposition Approach
2019
[7] Progress in selenium based metal-organic precursors for main group and transition metal selenide thin films and nanomaterials
2019
[8] Chalcogen-containing metal chelates as single-source precursors of nanostructured materials: recent advances and future development
2019
[9] Photoelectrochemical performance of spray-deposited Fe-doped ZnS0. 2Se0. 8 thin films
2019
[10] Исследование ширины запрещенной зоны смешанных кристаллов ZnSxSe₁₋ x
2018
[11] Band gap change of bulk ZnSxSe1–x semiconductors by controlling the sulfur content
2018
[12] Morphological, structural, compositional and raman characterization of ZnSxSe1-x thin films deposited by quasi-closed volume technique
2018
[13] ИССЛЕÄОВАНИЕ ШИРИНЫ ЗАПРЕЩЕННОЙ ЗОНЫ СМЕШАННЫХ ÊРИСТАЛЛОВ ZnS
МАТЕРИАЛЫ ЭЛЕКТРОНИКИ, 2018
[14] MORPHOLOGICAL, STRUCTURAL, COMPOSITIONAL AND RAMAN CHARACTERIZATION OF ZnSXSe1-X THIN FILMS DEPOSITED BY QUASI-CLOSED …
2018
[15] Зміна забороненої зони ZnSxSe1–x об'ємних напівпровідників шляхом регулювання вмісту сірки
2018
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