has been cited by the following article(s):
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[1]
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Impact of multiple cations doping on Zn–Sn–Se nanostructures for optoelectronic applications
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Journal of Materials Science: Materials …,
2023 |
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[2]
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Stability of InP/ZnSe/ZnS Quantum Dots in Light-Emitting Diodes: Role of Shell Thickness and Surface Chemistry
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2022 IEEE 12th …,
2022 |
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[3]
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Фотолюминесценция нанокристаллов ZnSxSe1-x и ZnSxSe1-x: Mn, полученных методом самораспространяющегося высокотемпературного синтеза
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Proceedings of the …,
2022 |
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[4]
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Characterization of Cobalt Selenide Films using FESEM and EDX
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Int. J. Thin Films Sci. Technol,
2022 |
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[5]
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Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides
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2021 |
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[6]
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Structural, optical and electrical properties of spray-deposited Fe-doped nanocrystalline ZnS0.2Se0.8 thin films
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2021 |
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[7]
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Investigation of Toxicity of Zinc Selenium/Zinc Sulphide Quantum (ZnSe/ZnS) Dots at Molecular Level
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2020 |
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[8]
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Electronic, magnetic and optical properties of monolayer (ML) hexagonal ZnSe on vacancy defects at Zn sites from DFT-1/2 approach
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2020 |
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[9]
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In vitro and In vivo toxicity analysis of zinc selenium/zinc sulfide (ZnSe/ZnS) quantum dots
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2020 |
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[10]
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Metal–organic precursors for ternary and quaternary metal chalcogenide nanoparticles and thin films
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2020 |
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[11]
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Development of Coinage Metal Chalcogenides Thin Films by Chemical Vapour Deposition Approach
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2019 |
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[12]
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Progress in selenium based metal-organic precursors for main group and transition metal selenide thin films and nanomaterials
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2019 |
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[13]
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Chalcogen-containing metal chelates as single-source precursors of nanostructured materials: recent advances and future development
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2019 |
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[14]
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Photoelectrochemical performance of spray-deposited Fe-doped ZnS0. 2Se0. 8 thin films
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2019 |
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[15]
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Исследование ширины запрещенной зоны смешанных кристаллов ZnSxSe₁₋ x
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2018 |
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[16]
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Band gap change of bulk ZnSxSe1–x semiconductors by controlling the sulfur content
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2018 |
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[17]
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Morphological, structural, compositional and raman characterization of ZnSxSe1-x thin films deposited by quasi-closed volume technique
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2018 |
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[18]
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ИССЛЕÄОВАНИЕ ШИРИНЫ ЗАПРЕЩЕННОЙ ЗОНЫ СМЕШАННЫХ ÊРИСТАЛЛОВ ZnS
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МАТЕРИАЛЫ ЭЛЕКТРОНИКИ,
2018 |
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[19]
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MORPHOLOGICAL, STRUCTURAL, COMPOSITIONAL AND RAMAN CHARACTERIZATION OF ZnSXSe1-X THIN FILMS DEPOSITED BY QUASI-CLOSED …
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2018 |
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[20]
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Зміна забороненої зони ZnSxSe1–x об'ємних напівпровідників шляхом регулювання вмісту сірки
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2018 |
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[21]
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Band gap change of bulk ZnSxSe1-x semiconductors by controlling the sulfur content
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Ukrainian Journal of Physics,
2018 |
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[22]
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SEMICONDUCTORS AND DIELECTRICS
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[1]
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Impact of multiple cations doping on Zn–Sn–Se nanostructures for optoelectronic applications
Journal of Materials Science: Materials in Electronics,
2023
DOI:10.1007/s10854-022-09716-2
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[2]
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Stability of InP/ZnSe/ZnS Quantum Dots in Light-Emitting Diodes: Role of Shell Thickness and Surface Chemistry
2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP),
2022
DOI:10.1109/NAP55339.2022.9934113
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[3]
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Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides
Chemical Reviews,
2021
DOI:10.1021/acs.chemrev.0c01183
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[4]
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Investigation of band gap width in mixed ZnSxSe1–x crystals
Технология и конструирование в электронной аппаратуре,
2018
DOI:10.15222/TKEA2018.5-6.44
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