Simulation and Experimental Data of P-E Hysteresis Loop in BNT and BKT

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ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org

"Simulation and Experimental Data of P-E Hysteresis Loop in BNT and BKT"
written by Natheer B. Mahmood, Emad K. Al-Shakarchi,
published by Journal of Modern Physics, Vol.8 No.5, 2017

has been cited by the following article(s):

[1]	Simulation of Hall Effect in Semiconductor for Current Sensors Applications
	2021

[2]	High energy-storage density under low electric field in lead-free relaxor ferroelectric film based on synergistic effect of multiple polar structures
	2020

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[2]	Simulation of Hall Effect in Semiconductor for Current Sensors Applications Journal of Physics: Conference Series, 2021 DOI:10.1088/1742-6596/1804/1/012139

[3]	Simulation of Hall Effect in Semiconductor for Current Sensors Applications Journal of Physics: Conference Series, 2021 DOI:10.1088/1742-6596/1804/1/012139

[4]	Simulation of Hall Effect in Semiconductor for Current Sensors Applications Journal of Physics: Conference Series, 2021 DOI:10.1088/1742-6596/1804/1/012139

[5]	Sustainable Nanotextured Wave Energy Harvester Based on Ferroelectric Fatigue‐Free and Flexoelectricity‐Enhanced Piezoelectric P(VDF‐TrFE) Nanofibers with BaSrTiO 3 Nanoparticles Advanced Functional Materials, 2020 DOI:10.1002/adfm.202001150

[6]	High energy-storage density under low electric field in lead-free relaxor ferroelectric film based on synergistic effect of multiple polar structures Journal of Power Sources, 2019 DOI:10.1016/j.jpowsour.2019.227457

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