The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices

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ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.org/journal/msa
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"The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices"
written by Rene Rodriguez, Benjamin Poulter, Mateo Gonzalez, Fadil Ali, Lisa D. Lau, McKenzie Mangun,
published by Materials Sciences and Applications, Vol.8 No.2, 2017

has been cited by the following article(s):

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[4]	EFFECT OF 80 MeV Si SWIFT HEAVY ION IRRADIATION ON Ge22Se78 THIN FILMS FOR OPTICAL APPLICATIONS
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[5]	XiaoLiang Hong, Desmond JiaJun Loy, Putu Andhita Dananjaya, Funan Tan
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