"
Minority Carrier Diffusion Coefficient D*(B,T): Study in Temperature on a Silicon Solar Cell under Magnetic Field"
written by Richard Mane, Ibrahima Ly, Mamadou Wade, Ibrahima Datta, Marcel S. Douf, Youssou Traore, Mor Ndiaye, Seni Tamba, Grégoire Sissoko,
published by
Energy and Power Engineering,
Vol.9 No.1, 2017
has been cited by the following article(s):
[1]
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Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n+/p/p+) Silicon Solar Cell Base Thickness Optimization under Long …
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[2]
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2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy
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[3]
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Etude à trois dimensions d'une photopile au silicium polycristallin: Effet du taux de dopage, de la taille des grains et des vitesses de recombinaison aux joints de grain.
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[4]
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AC Back Surface Recombination Velocity in n+-p-p+ Silicon Solar Cell under Monochromatic Light and Temperature
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[5]
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n+-pp+ Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field
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[6]
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Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination
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[7]
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Behavior of a Ferromagnetic Photovoltaic Module under the Harmful Effects of an External Magnetic Field
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2020 |
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[8]
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Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination
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Journal of …,
2020 |
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[9]
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Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field
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Power …,
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[10]
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Available online www. jsaer. com
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2018 |
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