"
Influence of Defects on Low Temperature Diffusion of Boron in SiC"
written by Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky,
published by
Materials Sciences and Applications,
Vol.2 No.9, 2011
has been cited by the following article(s):
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[1]
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Activation Energy of the Conductance of p–n-4H-SiC〈 Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion
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2020 |
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[2]
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Activation Energy of the Conductance of pn-4H-SiC «Al» Structures Doped with Aluminum by the Method of Low-Temperature Diffusion
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2020 |
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[3]
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ВЛИЯНИЕ ИОНИЗОВАННЫХ ПРИМЕСЕЙ И МИКРОТРУБОК НА ВАХ pn-4Н-SiC-ПЕРЕХОДА
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2020 |
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[4]
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ACTIVATION ENERGY OF THE CONDUCTANCE OF pw-4H-SiC (Al) STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW-TEMPERATURE …
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Journal of Engineering …,
2020 |
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[5]
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Research of pin junctions based on 4Н-SiC fabricated by low temperature diffusion of Boron
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Advances in Materials Science and Engineering,
2018 |
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[6]
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Research of pin junctions based on 4H-SiC fabricated by low-temperature diffusion of boron
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Advances in Materials Science and Engineering,
2018 |
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[7]
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Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
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Journal of Spectroscopy,
2018 |
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[8]
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Fast Switching 4H-SiC Pin Structures Fabricated by Low Temperature Diffusion of Al
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Advances in Condensed Matter Physics,
2017 |
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[9]
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Phase and morphology studies of B4C–SiC nanocomposite powder synthesized by MASHS method in B2O3, Mg, C and Si system
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Advanced Powder Technology,
2015 |
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[10]
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Phase and morphology studies of B 4 C–SiC nanocomposite powder synthesized by MASHS method in B 2 O 3, Mg, C and Si system
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Advanced Powder Technology,
2015 |
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[11]
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PROCESSING AND CHARACTERISATION OF TANDEM SOLAR CELLS FROM CRYSTALLINE SILICON MATERIALS
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NULL
2013 |
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[1]
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Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron
Advances in Materials Science and Engineering,
2018
DOI:10.1155/2018/8797031
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[2]
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Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
Journal of Spectroscopy,
2018
DOI:10.1155/2018/8705658
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[3]
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Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
Advances in Condensed Matter Physics,
2017
DOI:10.1155/2017/7820676
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