"
The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals"
written by Hrant N. Yeritsyan, Aram A. Sahakyan, Norair E. Grigoryan, Eleonora A. Hakhverdyan, Vachagan V. Harutyunyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan, Bagrat A. Grigoryan, Vardan Sh. Avagyan, Gayane A. Amatuni, Ashot S. Vardanyan,
published by
Journal of Modern Physics,
Vol.7 No.12, 2016
has been cited by the following article(s):
[1]
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Introduction rates of radiation defects in electron irradiated semiconductor crystals of n-Si and n-GaP
Radiation Physics and Chemistry,
2020
DOI:10.1016/j.radphyschem.2020.109056
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[2]
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The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals
Journal of Electronic Materials,
2018
DOI:10.1007/s11664-018-6286-6
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