Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors

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ISSN Print: 2327-5219
ISSN Online: 2327-5227
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"Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors"
written by Rongbin Ye, Koji Ohta, Mamoru Baba,
published by Journal of Computer and Communications, Vol.4 No.5, 2016

has been cited by the following article(s):

[1]	Preparation technology of 3–3 composite piezoelectric material and its influence on performance
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[2]	Temperature sensors based on organic field-effect transistors
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[3]	Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor
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[4]	Relatórios de Estágio e Monografia intitulada" Apitoxina: toxicidade e potencial terapêutico"
	2020

[1]	Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations Nanotechnology, 2024 DOI:10.1088/1361-6528/acf6c9

[2]	Temperature Sensors Based on Organic Field-Effect Transistors Chemosensors, 2021 DOI:10.3390/chemosensors10010012

[3]	Preparation technology of 3–3 composite piezoelectric material and its influence on performance Journal of Alloys and Compounds, 2020 DOI:10.1016/j.jallcom.2020.158137

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