"
Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers"
written by Caitlin Rouse, John W. Zeller, Harry Efstathiadis, Pradeep Haldar, Jay S. Lewis, Nibir K. Dhar, Priyalal Wijewarnasuriya, Yash R. Puri, Ashok K. Sood,
published by
Optics and Photonics Journal,
Vol.6 No.5, 2016
has been cited by the following article(s):
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[1]
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Broadband near infrared all-dielectric metasurface absorber
Results in Physics,
2021
DOI:10.1016/j.rinp.2021.104813
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[2]
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Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime
ACS Photonics,
2021
DOI:10.1021/acsphotonics.1c01359
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[3]
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Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime
ACS Photonics,
2021
DOI:10.1021/acsphotonics.1c01359
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[4]
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High-Q All-Dielectric Metasurface: Super and Suppressed Optical Absorption
ACS Photonics,
2020
DOI:10.1021/acsphotonics.0c00003
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[5]
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Fabrication and characterization of sensitive vertical P-i-N germanium photodiodes as infrared detectors
Semiconductor Science and Technology,
2020
DOI:10.1088/1361-6641/ab6bf7
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[6]
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Two-Step Liquid Phase Crystallized Germanium-Based Photodetector for Near-Infrared Applications
IEEE Sensors Journal,
2020
DOI:10.1109/JSEN.2020.2966759
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[7]
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High-Q All-Dielectric Metasurface: Super and Suppressed Optical Absorption
ACS Photonics,
2020
DOI:10.1021/acsphotonics.0c00003
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[8]
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Near-Infrared Super-Absorbing All-Dielectric Metasurface Based on Single-Layer Germanium Nanostructures
Laser & Photonics Reviews,
2018
DOI:10.1002/lpor.201800076
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