Journal of Modern Physics

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org
"Clusters of Radiation Defects in Silicon Crystals"
written by Hrant N. Yeritsyan, Aram A. Sahakyan, Norair E. Grigoryan, Vachagan V. Harutunyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan,
published by Journal of Modern Physics, Vol.6 No.9, 2015
has been cited by the following article(s):
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[1] Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers
Materials, 2022
[2] Влияние радиационных дефектов, созданных низкоэнергетическими протонами, на импульсные характеристики кремниевых n+-p-p+ структур
Современные …, 2021
[3] Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures
2020
[4] Modelling of disordering regions in proton-irradiated silicon
2020
[5] Влияние радиационных дефектов, созданных низкоэнергетическими протонами при температуре 83 K, на характеристики кремниевых фотоэлектрических …
2020
[6] Влияние радиационных дефектов, созданных низкоэнергетическими протонами при температуре 83 K, на характеристики кремниевых …
2020
[7] NE Grigoryan, VV Harutyunyan, VM Tsakanov, BA Grigoryan, AS Yeremyan, et al.
2017
[8] Dielectric Characteristics of Pt/BaxSr1-xTiO3/Pt Thin Film Structure under the Electron Beam Irradiation
Armenian Journal of Physics, 2016
[9] Simulation of Electronic Center Formation by Irradiation in Silicon Crystals
Journal of Electronic Materials, 2016
[10] Dielectric Characteristics of Pt/BaxSr1-xTiO3/Pt Thin Film Structure under the Electron Beam Irradiation.
Armenian Journal of …, 2016
[11] The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal
Journal of Modern Physics, 2015
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