Accurate Extraction of Effective Gate Resistance in RF MOSFET

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

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"Accurate Extraction of Effective Gate Resistance in RF MOSFET"
written by Ikkyun Jo, Toshimasa Matsuoka,
published by Circuits and Systems, Vol.6 No.5, 2015

has been cited by the following article(s):

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[3]	A Novel device for low noise amplification in 130nm high resistivity RFSOI technology platform
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[4]	An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors
	Solid-State Electronics, 2017

[5]	Design, compact modeling and characterization of nanoscale devices
	ProQuest Dissertations Publishing, 2016

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