Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

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ISSN Print: 2160-8881
ISSN Online: 2160-889X
www.scirp.org/journal/opj
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"Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature"
written by Durga Prasad Sapkota, Madhu Sudan Kayastha, Makoto Takahashi, Koichi Wakita,
published by Optics and Photonics Journal, Vol.4 No.5, 2014

has been cited by the following article(s):

[1]	Analysis of Strained Al 0.15 In 0.22 Ga 0.63 As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure
	Journal of Optoelectronics Engineering, 2015

[2]	Excitonic Refractive Index Change in High Purity GaAs Modulator at Room Temperature for Optical Fiber Communication Network
	International Journal of Electronics and Communication Engineering, 2015

[3]	Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures
	Semiconductor Science and Technology, 2015

[4]	Analysis of Strained Al0. 15In0. 22Ga0. 63As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure
	2015

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