"Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits"
written by Amadou Diao, Ndeye Thiam, Martial Zoungrana, Gokhan Sahin, Mor Ndiaye, Grégoire Sissoko,
published by World Journal of Condensed Matter Physics, Vol.4 No.2, 2014
has been cited by the following article(s):
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[2] Ac Recombination Velocity in a Lamella Silicon Solar Cell
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[4] Available online www. jsaer. com
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[8] Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light
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[9] Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination
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[10] Effect of junction recombination velocity of electrical parameters of a vertical parallel silicon solar cell under frequency modulation
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[11] Incidence Angle Effect on Electrical Parameters of a Bifacial Silicon Solar Cell Illuminated by its Rear Side in Frequency Domain.
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[12] Influence of Magnetic Field on the Capacitance of a Vertical Junction Parallel Solar Cell in Static Regime, Under Multispectral Illumination.
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[13] Influence of Magnetic Field on the Capacitance of a Vertical Junction Parallel Solar Cell in Static Regime, Under Multispectral Illumination
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[14] Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit
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[15] Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination
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[16] Incidence Angle Effect on Electrical Parameters of a Bifacial Silicon Solar Cell Illuminated by its Rear Side in Frequency Domain
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[17] Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation
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[18] Modelling Study of Magnetic Field's Effects on Solar Cell's Transient Decay
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