Journal of Modern Physics

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org
"Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements"
written by D. Subba Reddy, M. Bhaskar Reddy, N. Nanda Kumar Reddy, V. Rajagopal Reddy,
published by Journal of Modern Physics, Vol.2 No.3, 2011
has been cited by the following article(s):
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[8] Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes
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[10] Elucidation of Inhomogeneous Heterojunction Performance of Al/Cu5FeS4 Schottky Diode With a Gaussian Distribution of Barrier Heights
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[11] Front and Back‐Junction Carbon Nanotube‐Silicon Solar Cells with an Industrial Architecture
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[12] Electrical Properties of Sulfonated Polyaniline Thin Film Grown on Different GaAs Substrates
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[13] Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes
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[15] High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications
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[17] Temperature Effect on Electronic Parameters of CuPc/n-Si Heterojunction
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[18] Temperature dependent switching behavior and photovoltaic effect in nn semiconductor heterojunction VO2/Nb: TiO2
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[19] Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode
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[20] THE COMPARATIVE STUDY ON THE ELECTRICAL PARAMETERS OF Ag/n-Si AND HYBRID STRUCTURE BASED ON ORGANIC INTERLAYER
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[21] Traps effect on the IVT characteristics of Au/n-InP Schottky barrier diode
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[22] CONTROLLING OF THE ELECTRICAL PARAMETERS OF Sn/p-Si JUNCTION BY FUNCTIONAL DYE THIN FILM
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[23] Optical and microelectronic analysis of rhodamine B-based organic Schottky diode: a new trend application
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[29] Effect of substrate temperature on electrical properties of (Al/p-Cu3SbS3/Mo) Schottky diodes grown by vacuum thermal evaporation
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[36] Electrical Characterisation of ZnO and ZnO Schottky barrier diodes
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[37] Evaluation of microstructural and electrical properties of WO 3-X thin films for p-Si/n-WO 3-X/Ag junction diodes
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[41] Bilayer Lift-off Technique for Micromachining
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[43] Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
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[44] Temperature-dependent current–voltage measurements of Au/C9H7N/p-Si: Characterization of a metal–organic-semiconductor device
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[45] Simulation of electronic states in a nanowire field-effect transistor
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[46] Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes
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[47] The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography
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[48] Temperature-dependent current–voltage measurements of Au/C 9 H 7 N/p-Si: Characterization of a metal–organic-semiconductor device
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[49] Direct DC Electrodeposition of Self-Supported Ni Nanowires on Semiconducting Barrier of Anodic Alumina
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[50] SUBCRITICAL WATER EXTRACTION AND DIRECT FORMATION OF MICROPARTICULATE POLYSACCHARIDE POWDERS FROM GANODERMA LUCIDUM
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[51] Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
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[52] Influence of etching parameters on optoelectronic properties of c-Si/porous silicon heterojunction–application to solar cells
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[55] The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes
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[56] Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes
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[57] Evaluation of conduction mechanism and electronic parameters for Au/organic–inorganic CuCl hybrid film/ITO structures
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