Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

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Journal of Modern Physics

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"Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements"
written by D. Subba Reddy, M. Bhaskar Reddy, N. Nanda Kumar Reddy, V. Rajagopal Reddy,
published by Journal of Modern Physics, Vol.2 No.3, 2011

has been cited by the following article(s):

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[1]	A review on electrical transport properties of thin film Schottky diode IOP Conference Series: Materials Science and Engineering, 2022 DOI:10.1088/1757-899X/1258/1/012052

[2]	Fabrication and Electrical Characterization of Ti/p-Si Metal Semiconductor Schottky Structures at Low Temperature Journal of Electronic Materials, 2022 DOI:10.1007/s11664-022-09955-3

[3]	Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects Sensors and Actuators A: Physical, 2022 DOI:10.1016/j.sna.2022.113935

[4]	Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects Sensors and Actuators A: Physical, 2022 DOI:10.1016/j.sna.2022.113935

[5]	Barrier height nature and photovoltaic properties of (2-(2-(2-nitrophenyl)diazenyl)malononitrile)/p-Si heterojunction Surfaces and Interfaces, 2021 DOI:10.1016/j.surfin.2021.101040

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[8]	Front and Back‐Junction Carbon Nanotube‐Silicon Solar Cells with an Industrial Architecture Advanced Functional Materials, 2020 DOI:10.1002/adfm.202000484

[9]	Elucidation of Inhomogeneous Heterojunction Performance of Al/Cu5FeS4 Schottky Diode With a Gaussian Distribution of Barrier Heights IEEE Transactions on Electron Devices, 2020 DOI:10.1109/TED.2020.2983489

[10]	Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier Applied Physics Letters, 2020 DOI:10.1063/5.0009645

[11]	Electrical Properties of Sulfonated Polyaniline Thin Film Grown on Different GaAs Substrates e-Journal of Surface Science and Nanotechnology, 2020 DOI:10.1380/ejssnt.2020.293

[12]	High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications Applied Sciences, 2019 DOI:10.3390/app9081587

[13]	Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices Radiation Effects and Defects in Solids, 2019 DOI:10.1080/10420150.2019.1579213

[14]	Enhancement in the Microelectronic Properties of a PFB–CdSe Quantum Dots Nanocomposite Based Schottky Barrier Diode Journal of Electronic Materials, 2019 DOI:10.1007/s11664-019-07328-x

[15]	Temperature Effect on Electronic Parameters of CuPc/n-Si Heterojunction Journal of Electronic Materials, 2019 DOI:10.1007/s11664-019-07400-6

[16]	Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes Semiconductor Science and Technology, 2019 DOI:10.1088/1361-6641/ab3671

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[18]	Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode 2018 International Conference on Communications and Electrical Engineering (ICCEE), 2018 DOI:10.1109/CCEE.2018.8634513

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