Electrical Analysis of Indium Deep Levels Effects on Kink Phenomena of Silicon NMOSFETs

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ISSN Print: 2161-4954
ISSN Online: 2161-4962
www.scirp.org/journal/wjnse
E-mail: wjnse@scirp.org

"Electrical Analysis of Indium Deep Levels Effects on Kink Phenomena of Silicon NMOSFETs"
written by Abdelaali Fargi, Neila Hizem, Adel Kalboussi, Abdelkader Souifi,
published by World Journal of Nano Science and Engineering, Vol.4 No.1, 2014

has been cited by the following article(s):

[1]	Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices
	AIP Conference Proceedings, 2017

[1]	Nanodevices for Integrated Circuit Design 2023 DOI:10.1002/9781394186396.ch3

[2]	Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices AIP Advances, 2017 DOI:10.1063/1.4985057

[3]	Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices AIP Advances, 2017 DOI:10.1063/1.4985057

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