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Materials Sciences and Applications
Submission
Materials Sciences and Applications
ISSN Print:
2153-117X
ISSN Online:
2153-1188
www.scirp.org/journal/msa
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msa@scirp.org
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"
Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes
"
written by
Ayşe Evrim Saatci, Orhan Özdemir, Kubilay Kutlu
,
published by
Materials Sciences and Applications
,
Vol.4 No.12, 2013
has been cited by the following article(s):
Google Scholar
CrossRef
[1]
New np Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device
Materials
,
2022
[2]
Non-volatile memory property of doped SnO2 nanowires synthesized using GLAD technique
2019
[3]
Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film
Journal of Electrical Engineering
,
2017
[4]
Electrical Characterization and Surface Topography of SiC Nanoparticle/CNTs Embedded 4H–SiC MOS Structure
Journal of Nanoscience and Nanotechnology
,
2016
[1]
New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device
Materials
,
2022
DOI:
10.3390/ma15103640
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