"Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis"
written by Kazunori Shinohara, Qiang Yu,
published by Engineering, Vol.2 No.12, 2010
has been cited by the following article(s):
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[2] Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure
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[3] Mission profile-based accelerated ageing tests Of SiC MOSFET And Si IGBT Power Modules In DC/AC Photovoltaic Inverters
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[5] FE analysis the effect of bonding wire and solder failure on the resistance and temperature of IGBT
[6] Power cycle tests of high temperature Ag sinter die-attach on metalized ceramic substrate by using micro-heater SiC chip
[7] Numerical Fatigue Life Prediction of IGBT Module for Electronic Locomotive
[8] Electro-thermal and thermal-mechanical FE analysis of IGBT module with different bonding wire shape
[9] Predicting LED System Life: A Long-term Study of the Factors that Determine Performance and Failure
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[11] Power Cycling Reliability of Power Module: A Survey
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[13] A Probabilistic Approach for Reliability and Life Prediction of Electronics in Drilling and Evaluation Tools
Kale, Amit A., Katrina Carter-Journet, Troy A. Falgout, Ludger Heuermann-Kuehn, and Derick Zurcher., 2014
[14] Application of nonlinear fatigue damage models in power electronic module wirebond structure under various amplitude loadings
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[15] パワー半導体モジュールのマルチフィジックスシミュレーション
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[16] アイテムリスト
[17] Thermo-elastic-plastic analysis for elastic component under high temperature fatigue crack growth rate
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[18] Thermo-elastic-plastic analysis for elastic component under high temperature fatigue crack growth rate.