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[1]
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Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior
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2020 |
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[2]
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Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy
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Applied Surface Science,
2018 |
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[3]
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Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures
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Advances in Semiconductor Nanostructures,
2017 |
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[4]
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Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature
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Semiconductor Science and Technology,
2017 |
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[5]
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Formation of lateral nanowires by Ge deposition on Si (111) at high temperatures
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Journal of Crystal Growth,
2016 |
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[6]
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Formation and optical properties of Ge films grown on Si (111) substrates using nanocontact epitaxy
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Applied Surface Science,
2015 |
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[7]
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Formation and optical properties of Ge films grown on Si (1 1 1) substrates using nanocontact epitaxy
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Applied Surface Science,
2015 |
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[8]
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Тонкие монокристаллические слои Ge на 2-дюймовых подложках Si
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Письма в ЖТФ,
2015 |
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[9]
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Strain-induced Ge segregation on Si at high temperatures
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Journal of Crystal Growth,
2015 |
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[10]
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Энергетический спектр электронов и особенности оптического поглощения однослойных гидроксисилоксановых структур с дефектами замещения силанольных групп электронодонорными атомами/Литинский АО, Нгуен Тхи Ша
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Известия ВолгГТУ. Серия «Электроника, измерительная техника, радиотехника и связь,
2015 |
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[11]
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Properties of three-dimensional structures prepared by Ge dewetting from Si (111) at high temperatures
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Journal of Applied Physics,
2015 |
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[12]
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Thin single-crystal Ge layers on 2 ″Si substrates
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Technical Physics Letters,
2015 |
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[13]
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HIGH EFFICIENCY MATERIALS BASED ON Ge FOR HIGH SPEED DEVICES
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2015 |
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[14]
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Mechanisms of surface morphology formation during Ge growth on Si (100) at high temperatures
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Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on,
2015 |
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[15]
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Энергетический спектр электронов и особенности оптического поглощения однослойных гидроксисилоксановых структур с дефектами замещения …
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2014 |
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[16]
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Энергетический спектр электронов и особенности оптического поглощения однослойных гидроксисилоксановых структур с дефектами замещения …
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2014 |
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[17]
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Surface morphology formation of Ge layers on Si (111) under high-temperature annealing
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Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on. IEEE,
2014 |
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[18]
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Surface morphology of Ge layers epitaxially grown on bare and oxidized Si (001) and Si (111) substrates
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Surface Science.Elsevier,
2014 |
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