Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging

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ISSN Print: 2169-2491
ISSN Online: 2169-2505
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"Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging"
written by Yuxin Song, Shumin Wang, Carl Asplund, Rickard Marcks von Würtemberg, Hedda Malm, Amir Karim, Xiang Lu, Jun Shao,
published by Crystal Structure Theory and Applications, Vol.2 No.2, 2013

has been cited by the following article(s):

[1]	Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors
	Journal of Electronic …, 2022

[2]	Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector
	2020

[3]	Multi-color Photodetectors via Wafer Bonding and Epitaxial Lift-Off of III-V Compound Semiconductors
	2019

[4]	Antimonide-based membranes synthesis integration and strain engineering
	2016

[5]	Next generation mid-wave infrared cascaded light emitting diodes: growth of broadband, multispectral, and single color devices on GaAs and integrated circuits
	ProQuest Dissertations Publishing, 2016

[6]	Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe
	SPIE Defense+ Security, 2014

[1]	Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors Journal of Electronic Materials, 2022 DOI:10.1007/s11664-022-09906-y

[2]	Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy Chinese Physics B, 2022 DOI:10.1088/1674-1056/ac8729

[3]	Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector Journal of Semiconductors, 2020 DOI:10.1088/1674-4926/41/6/062302

[4]	GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device Japanese Journal of Applied Physics, 2018 DOI:10.7567/JJAP.57.08PD05

[5]	Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe Infrared Technology and Applications XL, 2014 DOI:10.1117/12.2050490

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