has been cited by the following article(s):
[1]
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Improvement of Drive Currents of FinFET using Strained Si Technology
Journal of The Institution of Engineers (India): Series B,
2022
DOI:10.1007/s40031-021-00641-2
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[2]
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Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs
Journal of Semiconductors,
2014
DOI:10.1088/1674-4926/35/8/084001
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[3]
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Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon–Germanium-on-Insulator (SGOI) MOSFETs
Superlattices and Microstructures,
2013
DOI:10.1016/j.spmi.2013.02.012
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[4]
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Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate
Acta Physica Sinica,
2012
DOI:10.7498/aps.61.107301
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