Crystal Structure Theory and Applications

Crystal Structure Theory and Applications

ISSN Print: 2169-2491
ISSN Online: 2169-2505
www.scirp.org/journal/csta
E-mail: csta@scirp.org
"Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma"
written by Rachid Amrani, Pascale Abboud, Larbi Chahed, Yvan Cuminal,
published by Crystal Structure Theory and Applications, Vol.1 No.3, 2012
has been cited by the following article(s):
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[2] Optical and Microstructural Properties of Sputtered Thin Films for Photovoltaic Applications
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[3] The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique
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[4] Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition
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[5] The effects of argon and helium dilution in the growth of nc-Si: H thin films by plasma-enhanced chemical vapor deposition
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[6] Light‐Induced Reversible Optical Properties of Hydrogenated Amorphous Silicon: A Promising Optically Programmable Photonic Material
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[7] Characterization and modeling of electrical transport in undoped hydrogenated microcrystalline silicon
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[8] Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes
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[9] Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films
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[10] Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents
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[11] Mixed phase silicon thin films grown at high rate using 60MHz assisted VHF-PECVD technique
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[12] Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique
Materials Science in Semiconductor Processing, 2015
[13] Structural analysis of hydrogenated nanocrystalline silicon thin films as a function of substrate temperature during deposition
The European Physical Journal Applied Physics, 2014
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