Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

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Crystal Structure Theory and Applications

ISSN Print: 2169-2491
ISSN Online: 2169-2505
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"Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma"
written by Rachid Amrani, Pascale Abboud, Larbi Chahed, Yvan Cuminal,
published by Crystal Structure Theory and Applications, Vol.1 No.3, 2012

has been cited by the following article(s):

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[12]	Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films
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[13]	Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents
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[14]	Mixed phase silicon thin films grown at high rate using 60MHz assisted VHF-PECVD technique
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[16]	Structural analysis of hydrogenated nanocrystalline silicon thin films as a function of substrate temperature during deposition
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[5]	Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition Thin Solid Films, 2018 DOI:10.1016/j.tsf.2017.10.031

[6]	The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique Silicon, 2018 DOI:10.1007/s12633-018-0025-8

[7]	Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films Journal of Applied Physics, 2017 DOI:10.1063/1.4998455

[8]	Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films Journal of Applied Physics, 2017 DOI:10.1063/1.4998455

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