New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

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ISSN Print: 2161-4954
ISSN Online: 2161-4962
www.scirp.org/journal/wjnse
E-mail: wjnse@scirp.org

"New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature"
written by Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi,
published by World Journal of Nano Science and Engineering, Vol.2 No.4, 2012

has been cited by the following article(s):

[1]	DESIGN AND SIMULATION OF CHARGE TRANSPORT IN SINGLE-ELECTRON TRANSISTOR USING TCAD NUMERICAL SIMULATOR
	2021

[2]	Room-temperature high sensitivity of multiple tunnel junctions based on single-charge photodetection
	2019

[3]	Effect of temperature on electrical characteristics of single electron transistor
	Microsystem Technologies, 2018

[4]	Analysis and simulation of Single Electron Transistor as an analogue frequency doubler
	Microelectronics Journal, 2018

[5]	Design and analysis of low power 8-bit ALU on reversible logic for nanoprocessors
	Journal of Ambient Intelligence and Humanized Computing, 2018

[6]	Power gain mechanism and methods for power gain improvement of quantum and conventional transistors
	2016

[7]	Theoretical Analysis and Characterization of Multi-Islands Single-Electron Devices with Applications
	The Scientific World Journal, 2014

[8]	Multigate Single Electron Transistor Operation at Room Temperature and its Performance in Hybrid CMOS-SET Architecture
	Doctoral dissertation, Jadavpur University, Kolkata, 2014

[9]	Performance of Multigate Single Electron Transistor in Wide Temperature Range and 22 nm Hybrid Technology
	Journal of Nanoelectronics and Optoelectronics, 2014

[10]	Power gain improvement for single-electron transistors
	Japanese Journal of Applied Physics, 2014

[11]	Numerical Simulation of Set using TCAD

[1]	NUMERICAL SIMULATION OF SET USING TCAD i-manager’s Journal on Electronics Engineering, 2021 DOI:10.26634/jele.12.1.15128

[2]	Room-temperature high sensitivity of multiple tunnel junctions based on single-charge photodetection Journal of Computational Electronics, 2019 DOI:10.1007/s10825-019-01390-8

[3]	Effect of temperature on electrical characteristics of single electron transistor Microsystem Technologies, 2018 DOI:10.1007/s00542-018-3725-5

[4]	Analysis and simulation of Single Electron Transistor as an analogue frequency doubler Microelectronics Journal, 2018 DOI:10.1016/j.mejo.2018.02.008

[5]	Design and analysis of low power 8-bit ALU on reversible logic for nanoprocessors Journal of Ambient Intelligence and Humanized Computing, 2018 DOI:10.1007/s12652-018-1074-y

[6]	Power gain improvement for single-electron transistors Japanese Journal of Applied Physics, 2014 DOI:10.7567/JJAP.53.04EJ03

[7]	Theoretical Analysis and Characterization of Multi-Islands Single-Electron Devices with Applications The Scientific World Journal, 2014 DOI:10.1155/2014/241214

[8]	Power gain improvement for single-electron transistors Japanese Journal of Applied Physics, 2014 DOI:10.7567/JJAP.53.04EJ03

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