World Journal of Condensed Matter Physics

World Journal of Condensed Matter Physics

ISSN Print: 2160-6919
ISSN Online: 2160-6927
www.scirp.org/journal/wjcmp
E-mail: wjcmp@scirp.org
"Dimers as Fast Diffusing Species for the Aggregation of Oxygen in Boron-Doped Czochralski Silicon: Formation of New Thermal Donors"
written by Besma Moumni, Abdelkadr Ben Jaballah, Selma Aouida, Brahim Bessaïs,
published by World Journal of Condensed Matter Physics, Vol.2 No.3, 2012
has been cited by the following article(s):
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[2] Clay-derived mesoporous Si/rGO for anode material of lithium-ion batteries
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[3] Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process
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[5] Kinetics of new thermal donors (NTDs) in CZ-silicon based on FTIR analysis
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[6] Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon
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[7] Activation of electrical defects under Rapid Thermal Annealing in Cz-silicon for solar cells application
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[8] Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon
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[9] Decrease of Thermal Donors in Si Single Crystal by Czochralski Method
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[10] Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors
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[11] Low Temperature Annealing Effect on Electrical Properties of Multicrystalline Silicon Wafers for Photovoltaic Application
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[12] Effect of annealing duration at 500 C on electrical properties of HEM multicrystalline silicon for solar cells
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