2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Journals Menu

Follow SCIRP

	+1 323-425-8868
	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org

Google-based Impact Factor: 0.86
Citations h5-index & Ranking

Journals Menu

"2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s"
written by Manel Charfeddine, Hafedh Belmabrouk, Mohamed Ali Zaidi, Hassen Maaref,
published by Journal of Modern Physics, Vol.3 No.8, 2012

has been cited by the following article(s):

Google Scholar
CrossRef

[1]	Modeling of access resistances and channel temperature estimation for GaN HEMT
	Journal of Thermal …, 2022

[2]	An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs
	Journal of …, 2022

[3]	Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications
	IEEE Transactions on …, 2022

[4]	Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model
	2022 International Conference on …, 2022

[5]	A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance
	2022 - CSIR-NIScPR, 2022

[6]	Design, Simulation and Characterization of Reconfigurable Mixer Using Gan Hemt Technology
	2022

[7]	Performance Prediction of GaN HEMTs Using Angelov and Curtice Models
	2022 Second International …, 2022

[8]	A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection
	2022 - NIScPR-CSIR, 2022

[9]	Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model
	2021 International …, 2021

[10]	Prevalence and concentration of mycotoxins (Aflatoxin B1, Ochratoxin A, Deoxynivalenol and Zearalenone) in the boiled poultry eggs and probabilistic health risk …
	International Journal of …, 2021

[11]	Modeling and Simulation of Non-Linear Microwave Power Amplifier Using Gan Hemt for S-Band Applications
	2021

[12]	Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate
	2021

[13]	Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs
	Indian Journal of Pure & Applied Physics …, 2021

[14]	Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application
	2021

[15]	Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
	2021

[16]	Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
	2021

[17]	Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm
	2020

[18]	Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor
	2020

[19]	Semi-classical and Quantum Transport for High Speed and High Power Electronic and Opto-electronic Devices
	2020

[20]	Correlation between Kink effect and trapping mechanism through H1 hole trap in Al 0.22 Ga 0.78 N/GaN/SiC HEMTs by current DLTS: field effect enhancement
	2020

[21]	Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
	2020

[22]	Self-Heating in the HEMT AlGaN/GaN transistor
	2020

[23]	Gallium Nitride—Emerging Future Technology for Low-Power Nanoscale IC Design
	2020

[24]	Etude et contribution à l'optimisation de la commande des HEMTs GaN
	2020

[25]	Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
	2020

[26]	Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
	2020

[27]	Studies on the Effects of Aluminium Mole Fraction, Doping Concentration and Gate Length to Control the Drain Current in GaN based High Electron Mobility …
	National Conference on …, 2020

[28]	Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm
	2019

[29]	Gallium Nitride based HEMTs in Nano-Scale Regime
	2019

[30]	Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
	2019

[31]	YÜKSEK VOLTAJ VE DÜŞÜK KAÇAK AKIM İÇİN ALD İLE PASİVE EDİLMİŞ MIS HEMT ÜRETİMİ
	2019

[32]	Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor
	2019

[33]	Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization
	2019

[34]	Review on the Designs and Characteristics of High-Electron Mobility Transistors
	2018

[35]	AN X-BAND ELECTRICAL BALANCE DUPLEXER FOR IN BAND FULL DUPLEX COMMUNICATIONS
	2018

[36]	SiC and GaN Power Semiconductor Devices
	Power Electronics Handbook (Fourth Edition), 2018

[37]	Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's
	2018

[38]	Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm
	2018

[39]	Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs
	2018

[40]	Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in …
	Journal of Nanoelectronics and Optoelectronics, 2018

[41]	Analytical Modeling and Simulation Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection
	2018

[42]	Adaptation of Spectral Clustering in Telecommunication Industry for Customer Relationship Management
	2018

[43]	Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's.
	2018

[44]	Design of a multi-MHz resonant driver chip for high-voltage
	2018

[45]	Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density
	2018

[46]	Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors
	2018

[47]	Calculating Transconductance of Nano-HEMT for Different Parasitic Resistances and External Biasing Conditions
	2018

[48]	Studies on the Variations of Drain Current in Gallium Nitride Based High Electron Mobility Transistors
	2018

[49]	Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
	2018

[50]	Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
	2018

[51]	Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
	2018

[52]	An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design
	2017

[53]	Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to …
	2017

[54]	Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
	2017

[55]	Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
	2017

[56]	Effect of Aluminium Nitride Nucleation-Layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
	2017

[57]	Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
	2017

[58]	Report on the effects of mole fraction, doping concentration, gate length and nano-layer thickness to control the device engineering in the Nanoelectronic …
	2017

[59]	Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in …
	2017

[60]	Report on the novel electrical characteristics of microelectronic high electron mobility transistors to establish a low-cost microelectronics laboratory in the …
	2017

[61]	Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD
	2017

[62]	A physics-based compact gallium nitride power semiconductor device model for advanced power electronics design
	2017

[63]	Integrated circuit with matching threshold voltages and method for making same
	2017

[64]	Piezotronic Effect tuned AlGaN/GaN High Electron Mobility Transistor
	Nanotechnology, 2017

[65]	Estimation of polarization charge in nitride based MODFETs using differential threshold voltage technique
	2016

[66]	Fabrication of ALN/GAN MIS-Hemt with SIN as gate dielectric and performance enhancement with ALD deposited alumina
	2016

[67]	Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface
	ProQuest Dissertations Publishing, 2016

[68]	Characteristics of AlGaN/GaN HEMTs for Detection of MIG
	2016

[69]	Dependence of threshold voltage on doped layer thickness in AlGaN/GaN HEMT: An improved split donor E-mode design
	2016

[70]	A physics-based compact device model for GaN HEMT power devices
	2016

[71]	Development of InAlN HEMTs for space application
	2016

[72]	Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
	2016

[73]	Variations of Source Current in the Double-Heterojunction HEMTs
	2016

[74]	Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer
	2016

[75]	Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer
	Communication Systems and Network Technologies (CSNT), 2015 Fifth International Conference on, 2015

[76]	Modelling of advanced submicron Gate InGaAs/InAlAs pHEMTS and RTD devices for very high frequency applications
	2015

[77]	GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits
	2015

[78]	Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
	Solid-State Electronics, 2014

[79]	Performance analysis of 20 nm gate-length In0. 2Al0. 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
	A Bhattacharjee TR Lenka - 半导体学报: 英文版, 2014

[80]	Characterization and comparison between Ig (Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
	Optical and Quantum Electronics, 2014

[81]	Performance analysis of 20 nm gate-length In0: 2Al0: 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
	A Bhattacharjee, TR Lenka - jos.ac.cn, 2014

[82]	Performance analysis of 20 nm gate-length In_ (0: 2) Al_ (0: 8) N/GaN HEMT with Cu-gate having a remarkable high I_ (ON)/I_ (OFF) ratio
	半导体学报 (英文版), 2014

[83]	Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
	Superlattices and Microstructures, 2013

[84]	Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications
	2013

[1]	Power Electronics Handbook 2024 DOI:10.1016/B978-0-323-99216-9.00039-1

[2]	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study Micromachines, 2023 DOI:10.3390/mi15010057

[3]	Modeling and Analysis of Electrical Characteristics of Symmetric Double Gate HEMT 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2023 DOI:10.1109/IMWS-AMP57814.2023.10381122

[4]	Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire Journal of the Korean Physical Society, 2023 DOI:10.1007/s40042-023-00799-6

[5]	Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer Applied Physics B, 2023 DOI:10.1007/s00340-023-08042-7

[6]	Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application IETE Journal of Research, 2023 DOI:10.1080/03772063.2021.1904019

[7]	Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2023 DOI:10.1002/jnm.3115

[8]	An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications Microelectronic Engineering, 2023 DOI:10.1016/j.mee.2023.111948

[9]	Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application IETE Journal of Research, 2023 DOI:10.1080/03772063.2021.1904019

[10]	Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications IEEE Transactions on Electron Devices, 2022 DOI:10.1109/TED.2022.3209643

[11]	An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs Journal of Computational Electronics, 2022 DOI:10.1007/s10825-022-01871-3

[12]	Performance Prediction of GaN HEMTs Using Angelov and Curtice Models 2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT), 2022 DOI:10.1109/ICAECT54875.2022.9808081

[13]	Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model 2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE), 2022 DOI:10.1109/ICAEEE54957.2022.9836363

[14]	Modeling of access resistances and channel temperature estimation for GaN HEMT Journal of Thermal Analysis and Calorimetry, 2022 DOI:10.1007/s10973-022-11371-y

[15]	Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications IEEE Transactions on Electron Devices, 2022 DOI:10.1109/TED.2022.3209643

[16]	Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design IEEE Open Journal of Power Electronics, 2021 DOI:10.1109/OJPEL.2021.3055531

[17]	Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure Optical and Quantum Electronics, 2021 DOI:10.1007/s11082-021-02750-0

[18]	Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application IETE Journal of Research, 2021 DOI:10.1080/03772063.2021.1904019

[19]	Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model 2021 International Conference on Electronics, Communications and Information Technology (ICECIT), 2021 DOI:10.1109/ICECIT54077.2021.9641374

[20]	Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors Computers, Materials & Continua, 2021 DOI:10.32604/cmc.2021.018248

[21]	Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement Applied Physics A, 2020 DOI:10.1007/s00339-020-03756-3

[22]	Energy Systems, Drives and Automations Lecture Notes in Electrical Engineering, 2020 DOI:10.1007/978-981-15-5089-8_44

[23]	Nanoscale VLSI Energy Systems in Electrical Engineering, 2020 DOI:10.1007/978-981-15-7937-0_9

[24]	Self-Heating in the HEMT AlGaN/GaN transistor 2020 IEEE 2nd International Conference on Electronics, Control, Optimization and Computer Science (ICECOCS), 2020 DOI:10.1109/ICECOCS50124.2020.9314423

[25]	Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization IEEE Transactions on Electron Devices, 2019 DOI:10.1109/TED.2019.2928536

[26]	Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor Materials Today: Proceedings, 2019 DOI:10.1016/j.matpr.2019.06.504

[27]	Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor IEEE Electron Device Letters, 2019 DOI:10.1109/LED.2019.2947141

[28]	Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors 2018 10th International Conference on Electrical and Computer Engineering (ICECE), 2018 DOI:10.1109/ICECE.2018.8636702

[29]	Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density 2018 10th International Conference on Electrical and Computer Engineering (ICECE), 2018 DOI:10.1109/ICECE.2018.8636786

[30]	Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection IEEE Sensors Journal, 2018 DOI:10.1109/JSEN.2018.2871718

[31]	Power Electronics Handbook 2018 DOI:10.1016/B978-0-12-811407-0.00005-2

[32]	Calculating Transconductance of Nano-HEMT for Different Parasitic Resistances and External Biasing Conditions 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2018 DOI:10.1109/IEMENTECH.2018.8465168

[33]	A physics-based compact gallium nitride power semiconductor device model for advanced power electronics design 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017 DOI:10.1109/APEC.2017.7931078

[34]	An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL), 2017 DOI:10.1109/COMPEL.2017.8013352

[35]	Piezotronic effect tuned AlGaN/GaN high electron mobility transistor Nanotechnology, 2017 DOI:10.1088/1361-6528/aa8a5a

[36]	Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD 2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT), 2017 DOI:10.1109/RTEICT.2017.8256633

[37]	Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope Journal of Computational Electronics, 2016 DOI:10.1007/s10825-015-0751-8

[38]	Characteristics of AlGaN/GaN HEMTs for Detection of MIG Journal of Modern Physics, 2016 DOI:10.4236/jmp.2016.713154

[39]	A DC analytical AlGaN/GaN HEMT model for transistor characterisation 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), 2016 DOI:10.1109/MIKON.2016.7492083

[40]	Dependence of threshold voltage on doped layer thickness in AlGaN/GaN HEMT: An improved split donor E-mode design 2016 5th International Conference on Informatics, Electronics and Vision (ICIEV), 2016 DOI:10.1109/ICIEV.2016.7760088

[41]	A physics-based compact device model for GaN HEMT power devices 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016 DOI:10.1109/WiPDA.2016.7799919

[42]	Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer 2015 Fifth International Conference on Communication Systems and Network Technologies, 2015 DOI:10.1109/CSNT.2015.103

[43]	Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN Optical and Quantum Electronics, 2014 DOI:10.1007/s11082-013-9747-4

[44]	Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable highION/IOFFratio Journal of Semiconductors, 2014 DOI:10.1088/1674-4926/35/6/064002

[45]	Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices Solid-State Electronics, 2014 DOI:10.1016/j.sse.2013.09.009

[46]	Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices Superlattices and Microstructures, 2013 DOI:10.1016/j.spmi.2013.10.019

Follow SCIRP

	+1 323-425-8868
	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Journal of Modern Physics

Journal of Modern Physics

Journals Menu

Home

About SCIRP

Service

Policies