has been cited by the following article(s):
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[1]
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Innovative Growth Techniques and Heterogeneous Structures for PbSe-Based MWIR Photodetectors
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2022 |
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[2]
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Integration of Epitaxial IV–VI Pb-Chalcogenide on Group IV Vicinal Ge Substrate to Form p–n Heterogeneous Structures
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Crystal Growth & …,
2021 |
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[3]
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Columnar Te-doped-PbSe thin films on glass for infrared photoelectric detection
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Vacuum,
2018 |
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[4]
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STUDY OF THE OPTICAL CHARACTERISTICS OF EPITAXIAL PbS1-ySeyLAYERS
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Global Journal of Engineering Science and Research Management,
2016 |
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[5]
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Analysis of the absorption spectra of epitaxial lead telluride and lead selenide layers
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International Journal of Engineering and Innovative Technology,
2015 |
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[6]
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INVESTIGATION OF THE OPTICAL ABSORPTION SPECTRA OF THIN EPITAXIAL LEAD SELENIDE LAYERS APPROACHING THE NANOSCALE THICKNESS
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Nano Studies,
2015 |
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[7]
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Stretching strain-effective “negative” pressure in Lead selenide nanolayers
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International Journal of Engineering and Innovative Technology,
2014 |
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[8]
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New Opportunities in Lead Selenide Nanolayers
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Advanced Materials Research,
2013 |
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[9]
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Epitaxial lead selenide layers over a wide range of their thickness on dielectric substrates
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J. Mat. Sci. Eng,
2013 |
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[10]
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Nanolayers of Lead Selenide on Potassium Chloride Substrates: Specific Features of Formation
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J. Mater. Sci. & Eng,
2013 |
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[11]
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The Structure of Thin Epitaxial Layers of Lead Selenide
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J. Mat. Sci. Eng,
2013 |
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[12]
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Modification of the properties of lead selenide layers at their nanothickness
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Nano Studies,
2013 |
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[13]
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Modeling of the quasi-dielectric state in PbSnTe and PbSnSe nanolayers with high concentration of nonstoichiometric defects
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Nano Studies,
2013 |
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[14]
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Etude et simulation des caractéristiques des structures périodiques métallodiélectriques.
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[15]
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MODIFICATION OF THE PROPERTIES OF LEAD ATION OF THE PROPERTIES OF LEAD ATION OF THE PROPERTIES OF LEAD SELENIDE LAYERS …
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AM Pashaev, OID Davarashvili
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