Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer

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ISSN Print: 2165-9257
ISSN Online: 2165-9273
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"Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer"
written by Zahra Ben Achour, Oualid Touayar, Nejmeddine Sifi,
published by Modern Instrumentation, Vol.1 No.2, 2012

has been cited by the following article(s):

[1]	Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared
	2017

[2]	Morphology of Porous Silicon Nanostructures in p-type Silicon Based on Novel Comparison between Two Electrochemical Cells Design
	Int. J. Electrochem. Sci, 2016

[3]	Effect of Etching Time on the Characteristics of Low Resistivity Porous Si Devices
	Modern Physics Letters B, 2013

[4]	Improved electrical characteristics of porous germanium photodiode obtained by phosphorus ion implantation
	International Journal of Nanotechnology, 2013

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[1]	EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES Modern Physics Letters B, 2013 DOI:10.1142/S0217984913502175