Effect of Temperature & Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners

Journals Menu

Follow SCIRP

ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

Citations h5-index & Ranking*

"Effect of Temperature & Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners"
written by Manisha Pattanaik, Shilpi Birla, Rakesh Kumar Singh,
published by Circuits and Systems, Vol.3 No.2, 2012

has been cited by the following article(s):

[1]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter
	2020

[2]	Analysis of Static Noise Margin in 6T Sram Cell At 45 And 32 NM Technology.
	2019

[3]	Analoginių signalų registravimas dideliu atskaitų dažniu panaudojant LPLM
	2016

[1]	Sustainable Development Through Engineering Innovations Lecture Notes in Civil Engineering, 2021 DOI:10.1007/978-981-15-9554-7_50

[2]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter International Journal on Smart Sensing and Intelligent Systems, 2020 DOI:10.21307/ijssis-2020-032

[3]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter International Journal on Smart Sensing and Intelligent Systems, 2020 DOI:10.21307/ijssis-2020-032

Follow SCIRP