Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

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"Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits"
written by Olivier Valorge, Fengyuan Sun, Jean-Etienne Lorival, Mohamed Abouelatta-Ebrahim, Francis Calmon, Christian Gontrand,
published by Circuits and Systems, Vol.3 No.2, 2012

has been cited by the following article(s):

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[1]	Parasitic Suppression in 2D Smart Power ICs Using Deep Trench Isolation: A Simulation Study National Academy Science Letters, 2019 DOI:10.1007/s40009-019-00830-0

[2]	Impact of TSV location in HVIC on CMOS operation: A mixed-mode TCAD simulation study Microelectronics Journal, 2018 DOI:10.1016/j.mejo.2018.03.008

[3]	An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration Microelectronics Journal, 2015 DOI:10.1016/j.mejo.2014.12.002

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