Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device

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ISSN Print: 2162-531X
ISSN Online: 2162-5328
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"Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device"
written by Nathera Abass Ali Al-Temeeme, Ghaida Salman Muhammed,
published by Advances in Materials Physics and Chemistry, Vol.2 No.1, 2012

has been cited by the following article(s):

[1]	Study of Porosity Gradient in Released Porous Silicon Microstructures
	2018

[2]	Characterisation of TiO2 nanoparticles on porous silicon for optoelectronics application
	Materials Technology, 2016

[3]	Ultraviolet photodetector based on TiO 2 nanoparticles/porous silicon hetrojunction
	Optik-International Journal for Light and Electron Optics, 2016

[4]	Ultraviolet photodetector based on TiO2 nanoparticles/porous silicon hetrojunction
	Optik, 2016

[5]	Porous Silicon: Volume-Specific Surface Area Determination from AFM Measurement Data
	Null, 2013

[1]	Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes Journal of Materials Science: Materials in Electronics, 2023 DOI:10.1007/s10854-023-10882-0

[2]	Study of Porosity Gradient in Released Porous Silicon Microstructures 2018 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2018 DOI:10.1109/COMMAD.2018.8715242

[3]	Ultraviolet photodetector based on TiO 2 nanoparticles/porous silicon hetrojunction Optik - International Journal for Light and Electron Optics, 2016 DOI:10.1016/j.ijleo.2015.12.002

[4]	Characterisation of TiO2 nanoparticles on porous silicon for optoelectronics application Materials Technology, 2016 DOI:10.1080/10667857.2015.1132988

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