"Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films"
written by Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey,
published by Materials Sciences and Applications, Vol.3 No.2, 2012
has been cited by the following article(s):
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[14] Sputtered amorphous thin film nanocomposites as an anode for lithium-ion batteries
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[15] Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si 1− x Ge x on silicon
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[16] TCAD Analysis of Silicon-Germanium (SiGe) based Back-Contact Back-Junction (BC-BJ) solar cell as an alternative for silicon based cells
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[17] Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon
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[18] Direktsynthese dotierter Silicium-Germanium-Mischkristallemit dem Spark Plasma Sintering-Verfahren, Nährstabsynthese und Einkristallzüchtung mittels Zonenschmelzen
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[19] Study of optoelectronic characteristics in Germanium-Silicon films deposited by low frequency plasma and related devices
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[20] Photoelectric device
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[21] OPTICAL SIMULATION OF PHOTODIODES AND PHOTOCELLS MADE OF AMORPHOUS SILICON/GERMANIUM
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