"Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs"
written by F. M. Abou El-Ela, A. Z. Mohamed,
published by Journal of Modern Physics, Vol.2 No.11, 2011
has been cited by the following article(s):
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[1] Characterization of the Absence of Polar and Inter-valley Scattering Mechanisms from Charge-Carrier Energy Curves for “In0.53Ga0.47As” Using Monte Carlo Simulation
Transactions on Electrical and Electronic Materials, 2018
[2] Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
Journal of Electronic Materials, 2018
[3] Study of Temperature dependence InAlN/AlN Superlattice based device characteristics and modelling using Nitride (14 N, 15 N) Isotopes
Superlattices and Microstructures, 2017
[4] Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy
Journal of Materials Science, 2017
[5] Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar
AIP Conference Proceedings, 2017
[6] 2D Simulation Study of DC and RF Characteristics of Double Heterostructure AlGaN/GaN DG-HEMT Device for High-Frequency Application
Materials Focus, 2017
[7] Modern comparative approach for carrier transport in InAlN/AlN superlattice device with characteristics and modelling using nitride (14N, 15N) isotopes
Superlattices and Microstructures, 2017
[8] Mobility Modeling of Gallium Nitride Nanowires
ProQuest Dissertations Publishing, 2017
[9] Luminescence imaging of photoelectron spin precession during drift in p-type GaAs
[10] Numerical simulation of local doped barrier layer AlGaN/GaN HEMTs
Superlattices and Microstructures, 2013