"Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation"
written by M. D. Haque, M. Julkarnain, A. Z. M. Touhidul Islam, N. Kamata,
published by Advances in Materials Physics and Chemistry, Vol.8 No.3, 2018
has been cited by the following article(s):
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