Review of the Global Trend of Interconnect Reliability for Integrated Circuit

ISSN Print: 2153-1285
ISSN Online: 2153-1293

Website: https://www.scirp.org/journal/cs
E-mail: cs@scirp.org

Citations h5-index & Ranking

Submission

"Review of the Global Trend of Interconnect Reliability for Integrated Circuit"
written by Qian Lin, Haifeng Wu, Guoqing Jia,
published by Circuits and Systems, Vol.9 No.2, 2018

has been cited by the following article(s):

[1]	Study of electromigration in integrated circuits at design level: Estudo da eletromigração em circuitos integrados na fase de projeto
	2020

[2]	Variability Analysis of On-Chip Interconnect System Using Prospective Neural Network
	2020

[3]	Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects
	2020

[4]	Performance Evaluation of On-chip Interconnect System using Prospective Neural Network Design
	2020

[5]	Percolation with plasticity for neuromorphic systems
	2020

[6]	Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate
	2019

[7]	Эпитаксия слоев GaN (0001) или GaN (1011) на подложке Si (100)
	2019

[8]	Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate
	AIP Conference Proceedings, 2018

[1]	Advances in VLSI and Embedded Systems Lecture Notes in Electrical Engineering, 2021 DOI:10.1007/978-981-15-6229-7_21

[2]	Percolation with plasticity for neuromorphic systems Journal of Physics: Complexity, 2020 DOI:10.1088/2632-072X/abb88c

[3]	Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects Japanese Journal of Applied Physics, 2020 DOI:10.35848/1347-4065/ab922f

[4]	Performance Evaluation of On-chip Interconnect System using Prospective Neural Network Design 2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020 DOI:10.1109/SCEECS48394.2020.83

[5]	Epitaxy of GaN(0001) and GaN(10 $$\bar {1}$$ 1) Layers on Si(100) Substrate Technical Physics Letters, 2019 DOI:10.1134/S106378501906004X

[6]	Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate AIP Advances, 2018 DOI:10.1063/1.5030776