Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

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Journal of Modern Physics

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"Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements"
written by M. Charfeddine, Malek Gassoumi, H. Mosbahi, C. Gaquiére, M. A. Zaidi, H. Maaref,
published by Journal of Modern Physics, Vol.2 No.10, 2011

has been cited by the following article(s):

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[35]	Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE
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[36]	Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors
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[37]	ВЛИЯНИЕ ПРОЦЕССА СТРУКТУРНОЙ РЕЛАКСАЦИИ В HEMT НА ОСНОВЕ НИТРИД-ГАЛЛИЕВЫХ ГЕТЕРОСТРУКТУР НА ИХ ЧАСТОТНЫЕ …

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[3]	Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method IEEE Transactions on Electron Devices, 2022 DOI:10.1109/TED.2022.3193889

[4]	Graded Strain-Enhanced Pyro-Phototronic Photodetector with Extreme Broad Band SSRN Electronic Journal , 2022 DOI:10.2139/ssrn.4021775

[5]	Graded strain-enhanced pyro-phototronic photodetector with a broad and plateau band Nano Energy, 2022 DOI:10.1016/j.nanoen.2022.107163

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[7]	Graded strain-enhanced pyro-phototronic photodetector with a broad and plateau band Nano Energy, 2022 DOI:10.1016/j.nanoen.2022.107163

[8]	2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT Microelectronic Engineering, 2021 DOI:10.1016/j.mee.2021.111508

[9]	Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method IEEE Transactions on Electron Devices, 2021 DOI:10.1109/TED.2021.3089449

[10]	2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT Microelectronic Engineering, 2021 DOI:10.1016/j.mee.2021.111508

[11]	Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors IEEE Transactions on Device and Materials Reliability, 2021 DOI:10.1109/TDMR.2021.3109088

[12]	Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020 DOI:10.1109/ASDAM50306.2020.9393836

[13]	Characterization of Deep Levels in AlGaN\|GaN HEMT by FT-DLTS and Current DLTS Semiconductors, 2020 DOI:10.1134/S1063782620100127

[14]	Thermal response and correlation between mobility and kink effect in GaN HEMTs Microelectronic Engineering, 2020 DOI:10.1016/j.mee.2019.111148

[15]	Local mismatch and noise investigation for pre and post multilayer pHEMTs Current Applied Physics, 2020 DOI:10.1016/j.cap.2020.09.006

[16]	Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization Journal of Alloys and Compounds, 2019 DOI:10.1016/j.jallcom.2019.07.234

[17]	High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells Applied Physics Express, 2017 DOI:10.7567/APEX.10.011004

[18]	Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs Silicon, 2017 DOI:10.1007/s12633-015-9337-0

[19]	High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells Applied Physics Express, 2017 DOI:10.7567/APEX.10.011004

[20]	Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology Semiconductor Science and Technology, 2017 DOI:10.1088/1361-6641/aa646f

[21]	Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer IEEE Transactions on Electron Devices, 2017 DOI:10.1109/TED.2017.2757516

[22]	Effect of access region and field plate on capacitance behavior of GaN HEMT 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015 DOI:10.1109/EDSSC.2015.7285160

[23]	Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material physica status solidi (a), 2015 DOI:10.1002/pssa.201532341

[24]	Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs Journal of Alloys and Compounds, 2015 DOI:10.1016/j.jallcom.2015.09.007

[25]	Deep traps in GaN-based structures as affecting the performance of GaN devices Materials Science and Engineering: R: Reports, 2015 DOI:10.1016/j.mser.2015.05.001

[26]	Effects of post-annealing on the passivation interface characteristics of AlGaN/GaN high electron mobility transistors Materials Science in Semiconductor Processing, 2015 DOI:10.1016/j.mssp.2015.02.062

[27]	Using vertical capacitance–voltage measurements for fast on‐wafer characterization of epitaxial GaN‐on‐Si material physica status solidi (a), 2015 DOI:10.1002/pssa.201532341

[28]	Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014 DOI:10.1116/1.4895840

[29]	Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN Optical and Quantum Electronics, 2014 DOI:10.1007/s11082-013-9747-4

[30]	Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014 DOI:10.1116/1.4895840

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