28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

Citations h5-index & Ranking*

"28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I"
written by Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane,
published by Circuits and Systems, Vol.8 No.4, 2017

has been cited by the following article(s):

[1]	Bulk Fin-FET strategy at distinct nanometer regime for measurement of short-channel effects
	Semiconductors, 2021

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[1]	Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects Semiconductors, 2021 DOI:10.1134/S1063782621050080